TESAGNovember 17th, 2007 - 1:04 pm ICT by admin
TESAG is a pure-play compound semiconductor epitaxial wafer foundry, certified according to ISO 9001: 2000. TESAG provides custom-designed epitaxial layer structures and thus supports the outsourcing of your epiwafer demands.
The process portfolio includes the growth of compound semiconductor wafers for high-power laser diodes, GaAs Schottky diodes, LEDs, VCSELs (Vertical Cavity Surface Emitting Lasers), high power HBTs and photodiodes. TESAG offers excellent quality in combination with short lead times.
As a spin-off of the Ferdinand-Braun-Institut in Berlin, a leading research institution in design, epitaxial growth and manufacturing of compound semiconductor devices, TESAG brings a huge experience in MOVPE (Metal-Organic Vapor Phase Epitaxy) for III / V devices to the marketplace.
WAFERS FOR HIGH-POWER LASER DIODES AND LASER BARS
TESAG supplies custom-designed laser wafers at wavelengths that range from 730nm to 980nm, with which customers achieve output powers exceeding 50W with device lifetimes well in excess of 10,000h. The highest volumes are produced for wavelengths around 800nm (pumping of Nd-YAG) and around 940nm (pumping of Yb-YAG).
Wavelengths longer than 980nm or shorter than 730nm are available upon request.
TESAG offers a high precision in the emission wavelength with excellent homogeneity over the wafer, which is particularly decisive for laser bar applications.
EPIWAFERS FOR LEDs (LIGHT EMITTING DIODES) AND VCSELs
TESAG has successfully worked with customers, tailoring LED structures for their specific requirements for sensing, medical and telecommunication applications. VCSELs (Vertical Cavity Surface Emitting Lasers) are produced in the 650nm to 1,060nm wavelength range.
EPIWAFERS FOR GaAs SCHOTTKY DIODES
Customers produce Schottky diodes with an operation voltage of up to 600V, based on epiwafers from TESAG. Our capacity for controlling the very low doping levels required and for maintaining a high yield in high volume production rewarded us, together
with our customers, with the Innovation award for Berlin / Brandenburg 2002.
EPITAXIAL WAFERS FOR HIGH-POWER HBTs
In addition to the standard GaAs HBT layer designs for the handset market, TESAG also provides HBT designs for high power and high voltage (26V) operations - for example in base stations. Using TESAG’s epiwafers, our customers achieve state-of-the-art ratios of current gain and intrinsic base sheet resistance (Β/Rsbi).
EPITAXIAL WAFERS FOR PHOTO DETECTORS
Using band gap engineering, the wavelength range of photo detectors is tuned to the specification of the customer.
AIX 2600G3 reactors are the platform for our mass production of 2in, 3in, 4in and 6in wafers. In order to support the development activities of our customers, smaller machines (AIX 200/4) can also be used.
CHARACTERISATION OF EPIWAFER LAYER STRUCTURES
TESAG offers extensive characterisation of the grown layer structures with respect to emission wavelength (electroluminescence, photoluminescence and reflection mapping), composition (high resolution x-ray diffraction), doping (ECV profiles, Hall measurements, SIMS), thicknesses (SEM and EBIC) and surface features (surface analyser).
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