Search

web stats

New device controls electron spin at room temperature

April 7th, 2009 - 3:18 pm ICT by ANI Tell a Friend -

Washington, April 7 (ANI): Researchers at North Carolina University, US, have developed a device that controls electron spin at room temperature.

The researchers have designed a magnetic semiconductor memory device, using GaMnN thin films, which utilizes both the charge and spin of electrons at room temperature.

This is a major breakthrough, as previous devices that used magnetic semiconductors (GaMnAs) and controlled electron spin were only functional at 100 K (or -173 Celsius).

By controlling the spin of electrons, the new device represents a significant advance in semiconductor efficiency and speed.

The new device is also an advance on earlier experimental models because it uses only 5-6 volts to switch the bias of the electrons. Previous cold-temperature devices used much higher voltage. (ANI)

Sphere: Related Content




Posted in Health Science, |

Leave a Comment

Please note: Comment moderation is enabled and may delay your comment. There is no need to resubmit your comment.


RSS feed for comments on New device controls electron spin at room temperature

Buy Viagra Online - Prices: $1.08 per pill .The Canadian Rx Drugs